Journal Title: پاییز 1387
Article title: A New BiCMOS Circuit for Driving Large Capacitive Load

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Article abstract:
In this paper regarding the fact that the collector current and therefore Base current are needed for a very short time, in order to drive large capacitive load, using BiCMOS technology, we have used the existing capacitor between source and gate of MOS transistors to do so. This method has increased the speed of the circuit in comparison to its similar circuits, and it needs very low static power dissipation. In this design, remarkable reduction of the number of transistors has lead to a significant improvement in chip area.
Article keyWords:
BiCMOS, Logic Gate, Driving Large Capacitive Load, Static Power Dissipation, Propagation Delay
Article Authors:

	mohammad Rashtian	First Author
	keivan Navi	Other Author	navi@sbu.ac.ir
	omid Hashemi pour	Other Author